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碳化硅功率器件终端结构及其制造方法

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Affilication of Author(s):lpl夏季赛雷竞技

Type of Patent:中国发明专利

State of Patent:授权

Service Invention or Not:no

Pre One:集成温度传感器的碳化硅VDMOS器件及其制作方法
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