Personal Information
Professor Supervisor of Doctorate Candidates
Paper Publications
- [1] Xiaochuan Deng , Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress,IEEE Transactions on Power Electronics, vol. 37, no. 9, pp. 10562-10571, Sep 2022.
- [2] Xiaochuan Deng , Short-circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs,IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 8300-8307, Jul 2021.
- [3] Xiaochuan Deng , Investigation and Failure Mode of Asymmetric and Double Trench SiC MOSFETs Under Avalanche Conditions,IEEE Transactions on Power Electronics, vol. 35, no. 8, pp. 8524-8531, Jul 2020.
- [4] Xiaochuan Deng , A Novel SiC MOSFET with Embedded Auto-adjust JFET with Improved Short Circuit Performance,IEEE Electron Device Letter, vol. 42, no. 12, pp. 1751-1754, Dec 2021.
- [5] Xiaochuan Deng , A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance,IEEE Electron Device Letters, vol. 41, no. 10, pp. 1472-1475, Oct 2020.
- [6] Xiaochuan Deng , A Hybrid-Channel Injection Enhanced Modulation 4H-SiC IGBT Transistors With Improved Performance,IEEE Transactions on Electron Devices, vol. 69, no. 8, pp. 4421-4426, Aug 2022.
- [7] Xiaochuan Deng , A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance,IEEE Transactions on Electron Devices, vol. 69, no. 11, pp. 6249-6254, Nov 2022.
- [8] Xiaochuan Deng , Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET,IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 9, no. 2, pp. 2147-2152, Feb 2021.
- [9] Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges,IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1505-1512, Mar 2019.
- [10] Achieving Zero Switching Loss in Silicon Carbide MOSFET,IEEE Transactions on Power Electronics, vol. 34, no. 12, pp. 12193-12199, Dec 2019.
- [11] Xiaochuan Deng , An Enhanced High Frequency Performance Sic MOSFET With Self-adjusting P-shield Region Potential,Semiconductor Science and Technology, vol. 37, no. 7, pp. 085019, Jul 2022.
- [12] Impact of Termination Region on Switching Loss for SiC MOSFET,IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 1026-1031, Feb 2019.
- [13] An Accumulation Mode RF Laterally Double Diffused MOSFET With Improved Performance,IEEE Electron Device Letters, vol. 37, no. 10, pp. 1321-1323, Oct 2016.
- [14] Xiaochuan Deng , Characterization and Fabrication of the CFM‑JTE for 4H‑SiC Power Device with High‑Efficiency Protection and Increased JTE Dose Tolerance Window,Nanoscale Research Letters, vol. 15, pp. 211, Oct 2020.
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