周琦
- 教授 博士生导师
- 性别：男
- 毕业院校：香港科技大学
- 学历：博士研究生毕业
- 学位：哲学博士学位
- 在职信息：在职人员
- 所在单位：集成电路科学与工程学院（示范性微电子学院）
- 职务 : Porfessor
- 学科：微电子学与固体电子学
- 曾获荣誉：中国电子学会优秀科技工作者（2017）
四川省电子学会“电子科学技术奖”一等奖（2015）
访问量 ：
- [1] Impact of Fluorine Plasma and Electrothermal Annealing on the Interfacial Properties at Ni/β-Ga2O3 Schottky Contacts,Journal of Semiconductors, pp. (Accepted),
- [2] Kuangli Chen , Rong Peng , Shuting Huang , Long Wang , Jianggen Zhu , Enchuan Duan , Bo Zhang , and Qi Zhou , Surge Current Capability and Failure Modes of 650 V p-GaN Gate HEMTs: A Multiphysics Study on Thermal–Electrical Coupling Effects,Electronics, vol. 14, no. 7, Mar 2025.
- [3] Study of the Short-Circuit Capability and Device Instability of p-GaN Gate HEMTs by Repetitive Short-Circuit Stress,lEEE Transactions on Power Electronics, vol. 39, no. 2, pp. 2247-2257,
- [4] A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor FieldEffect Transistor with a Buried Back Gate for Gallium Nitride SingleChip Complementary Logic Circuits,Electronics, vol. 13, no. 4, Feb 2024.
- [5] Total-Ionizing-Dose Radiation Effect on Dynamic Threshold Voltage in p-GaN Gate HEMTs,IEEE Transactions on Electron Devices, vol. 70, no. 8, pp. 4081-4086,
- [6] High threshold voltage enhancement-mode GaN p-FET with Si-rich LPCVD SiNx gate insulator for high hole mobility,J.Semicond, vol. 44, no. 8,
- [7] Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses,IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREIMIENT, vol. 72, pp. 1-11,
- [8] The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique,IEEE Transactions on Electron Devices, vol. 69, no. 10, pp. 5496-5502,
- [9] A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density,2022 J. Phys. D: Appl. Phys,
- [10] The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure,IEEE Transactions on Electron Devices, vol. 69, no. 9, pp. 4828-4834, Sep 2022.
- [11] 自热效应下 P-GaN HEMT 的國值漂移机理，电子与封装， vol. 22， no. 6， Mar 2022.
- [12] 重复短路应力下p-GaN HEMT器件的阈值电压，电子与封装， vol. 22， no. 6， Mar 2022.
- [13] A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage,IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1219-1225, Mar 2022.
- [14] Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range,Materials, Mar 2022.
- [15] Device Instability in the Third Quadrant of Schottky-Type p-GaN Gate HEMTs: The Hole Deficiency & Trapping Effect,2024 1EEE 17th Intermational Conference on Solid-State and Integrated Circuit Techmology(ICSICT), Oct 2024.
- [16] The non-monotonic instability of VTH and Rds,on in P-GaN Gate HEMTs Under Repetitive Short Circuit Stress: The role of electric-field & self heating effect,2024 1EEE 17th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct 2024.
- [17] The UIS Withstand Capability and Device Failure Mechanism of 650 V p-GaN Gate HEMTs,2024 IEEE 17th International Conference on Solid-State and Integrated Circuit Technology(ICSICT), Oct 2024.
- [18] Threshold voltage instability of p-GaN gate HEMT in 48-12V buck converter & its impact on circuit power loss variation,2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024.
- [19] A Novel E-mode GaN p-MISFET with Hole Compensation Effect Achieving High Drain Current and Ultra-Low Subthreshold Slope,2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Jun 2024.
- [20] Trap Dynamic Detection of GaN HEMT under Repetitive Short Circuit Degradation,2023 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), May 2023.
